FQP50N06L mosfet equivalent, n-channel mosfet.
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
* Low Gate Charge (Typ. 24.5 nC)
* Low Crss (Typ. 90 pF)
* 100% Avalanche Tested
* 17.
Features
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
* Low Gate Charge (Typ. 24.5 nC)
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.
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